| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an adhesive film for the surface protection of a semiconductor wafer in which the semiconductor wafer can be protected against damage at the time of carriage while correcting warp even if the semiconductor wafer is made as thin as 100 μm or less and exposed to a high temperature in a die bonding process, and to provide a method for protecting the semiconductor wafer using the adhesive film. Ž<P>SOLUTION: The adhesive film for the surface protection of a semiconductor wafer has an adhesive agent layer formed on one surface of a substrate film comprising a resin layer having a storage modulus in a range of 1×10<SP>7</SP>-1×10<SP>10</SP>Pa at least at 23-200°C and a resin layer having residual stress after 30 sec of 0.5(%) or less at 120°C. Ž<P>COPYRIGHT: (C)2004,JPO&NCIPI Ž |
