THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME

摘要

PURPOSE: A thin film transistor and a method of manufacturing the same are provided to secure the reliability of a thin film transistor by maintaining the threshold voltage of the thin film transistor. CONSTITUTION: In a thin film transistor and a method of manufacturing the same, a gate insulating layer(30), an amorphous silicon film, and an insulating layer are successively formed over a substrate. An insulating layer is patterned to form an etch stop layer(51) . An amorphous silicon film is patterned to form a semiconductor layer(41). A doped amorphous silicon layer is formed over the substrate. Source / drain metal layers are formed over the doped amorphous silicon layer. The doped amorphous silicon layer and source / drain metal layer are patterned to form contact layer and source / drain electrode through an identical mask process.