发明名称 MASK MATERIAL COMPOSITION, METHOD FOR FORMING OF IMPURITY DIFFUSED LAYER, AND SOLAR CELL
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a mask material composition that is suitably adoptable for a mask formed for diffusion barrier of an impurity diffusing component diffusing into a semiconductor substrate; a method for forming an impurity diffusing layer using the mask material composition; and a solar battery. <P>SOLUTION: This mask material composition is used for diffusion barrier of an impurity diffusing component into a semiconductor substrate, and includes a siloxane resin (A1) containing a constituent unit represented by formula (a1), where in the formula (a1), R<SB>1</SB>is a single bond or 1-5C alkylene group; and R<SB>2</SB>is a 6-20C aryl group. <P>COPYRIGHT: (C)2011,JPO&INPIT</p>
申请公布号 JP2011116953(A) 申请公布日期 2011.06.16
申请号 JP20100237107 申请日期 2010.10.22
申请人 TOKYO OHKA KOGYO CO LTD 发明人 TAKAHASHI MOTOKI;MORITA TOSHIRO;HIRAI TAKAAKI
分类号 C08L83/04;C08G77/04;H01L31/04;H01L31/068 主分类号 C08L83/04
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