发明名称 |
Methods to enhance effective work function of mid-gap metal by incorporating oxygen and hydrogen at a low thermal budget |
摘要 |
A process is disclosed of forming metal replacement gates for PMOS transistors with oxygen in the metal gates such that the PMOS gates have effective work functions above 4.85. Metal work function layers in the PMOS gates are oxidized at low temperature to increase their effective work functions to the desired PMOS range. Hydrogen may also be incorporated at an interface between the metal gates and underlying gate dielectrics. Materials for the metal work function layers and processes for the low temperature oxidation are disclosed.
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申请公布号 |
US7960802(B2) |
申请公布日期 |
2011.06.14 |
申请号 |
US20090621618 |
申请日期 |
2009.11.19 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
NIIMI HIROAKI;CHAMBERS JAMES JOSEPH |
分类号 |
H01L29/76 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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