| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a sintered compact which is usable for a sputtering target having a unitary crystal structure as a principal component in the region where the content of Ga is lower compared with the content of In. <P>SOLUTION: The sintered compact consists of an oxide which contains In, Ga and Zn in atomic ratios of 0.28≤Zn/(In+Zn+Ga)≤0.38, 0.18≤Ga/(In+Zn+Ga)≤0.28 and makes a compound having a homologous crystal structure expressed with InGaO<SB>3</SB>(ZnO) a principal component. <P>COPYRIGHT: (C)2011,JPO&INPIT |
