| 摘要 |
PROBLEM TO BE SOLVED: To improve film thickness uniformity of an SOI layer by paying attention to temperature unevenness of a wafer during oxygen ion implantation. SOLUTION: In a method of manufacturing an SIMOX wafer including a process of implanting oxygen ions into the silicon wafer and a process of annealing the silicon wafer into which the oxygen ions have been implanted, the amount of implanted oxygen ions is adjusted in accordance with temperature unevenness of the silicon wafer. Especially, in a method of manufacturing an SIMOX wafer including a first ion implantation process of forming an oxygen ion implantation layer of high concentration in the wafer by implanting oxygen ions into the silicon wafer at high temperature, a second ion implantation process of forming an amorphous layer by implanting oxygen ions into the silicon wafer, obtained in the first ion implantation process, at low temperature, and a process of annealing the silicon wafer into which the oxygen ions have been implanted, the amount of implanted oxygen ions at least in the second ion implantation process is adjusted in accordance with temperature unevenness of the silicon wafer. COPYRIGHT: (C)2011,JPO&INPIT
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