PLASMA CHEMCIAL VAPOR DEPOSTION APPARATUS

摘要

PURPOSE: A plasma chemical vapor deposition apparatus is provided to include an adjustment unit for adjusting the aperture ratio of first openings, thereby controlling the amount of a processing gas supplied onto a substrate. CONSTITUTION: A chamber(105) provides a space for processing a substrate(10). A lower electrode(110) is arranged in the chamber to support the substrate. A first upper electrode(120) comprises a penetration hole(125) to supply a reaction gas onto the substrate. A second upper electrode(150) is arranged in the chamber and on the first upper electrode. The second upper electrode comprises a first opening(155) to uniformly supply the reaction gas onto the first upper electrode.