Double-gate transistor with enhanced carrier mobility field

摘要

An apparatus comprising:
a substrate (150) having a substrate surface;
characterised by
a device (152) over the substrate surface comprising a device body (154), the device body (154) including a channel (494, 594) formed in a sidewall surface (136, 236) of the body (154) between a first junction region (203) and a second junction region (203);
wherein the body (154) further comprises:
a gate electrode (130, 230) wherein the first junction region (203) and the second junction region (303) are arranged adjacent the gate electrode; and wherein
the substrate has a lattice spacing that is different than a lattice spacing of the body (154), wherein the body (154) is adapted to have a current flow in the channel (494, 594) substantially perpendicular to a surface of the substrate (150).