| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of operating a plasma processing apparatus having an excellent mass production stability by suppressing peeling off of a reactive product deposited on inner walls (mainly, inner walls of the chamber) of a vacuum chamber other than a Faraday shield effective range. SOLUTION: The plasma processing method subjects a specimen with a layer made of an etching retardant material to plasma treatment with use of a plasma processing apparatus having discharging and processing sections. The method has: a first step S1 of performing aging treatment over the specimen before the specimen is etched; a second etching step S2 of subjecting the layer of the etching retardant material formed on the specimen to plasma treatment; a third step S3 of stabilizing films deposited on inner walls of a chamber forming a processing section by performing plasma treatment after the second step S2; and a step of repeating the second and third steps S2 and S3. COPYRIGHT: (C)2011,JPO&INPIT
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