| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin-film transistor capable of improving voltage and current characteristics between a source and a drain or the like, and to provide a light-emitting device, an electronic apparatus, and a method for forming the thin-film transistor. SOLUTION: A thin-film transistor 100 comprises a semiconductor film 119, a source electrode layer 140 formed over the semiconductor film 119, a drain electrode layer 142 formed over the semiconductor film 119, a channel protective film 113 formed between the source electrode layer 140 and the drain electrode layer 142 and over the semiconductor film 119. At least one of the source electrode layer 140 and the drain electrode layer 142 touches the channel protective film 113. Such an electrode layer has a touching region whose top surface does not surpass the top surface of the channel protective film 113, and the touching region does not overlap with the top surface of the channel protective film 113. COPYRIGHT: (C)2011,JPO&INPIT
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