| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to prevent SAC(Self Align Contact) fail occurring during a process for obtaining a space to form a contact between adjacent gate patterns, thereby preventing the semiconductor device from colliding with the gate patterns when the contact is formed. CONSTITUTION: An active area(104) is defined by a device separation area(102) formed on a semiconductor substrate. A gate pattern(110) is formed on the semiconductor substrate. A part of a nitride film(120) is eliminated. The nitride film is between gate patterns. An oxide film is exposed between the gate patterns. A part of silicon exposed between the gate patterns is eliminated.
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