| 摘要 |
PURPOSE: A semiconductor device is provided to arrange an electrode facilitating heat radiation from a semiconductor device having high power density and heat density. CONSTITUTION: In a semiconductor device, a gate electrode(24) and a drain electrode(22) having a plurality of fingers are arranged in the first surface of a substrate(10). A source electrode(20) having a plurality of regions is arranged in the first surface of the substrate. A gate terminal electrode and a drain terminal electrode are formed by bounding the plural finger with the gate electrode and a drain electrode respectively. The source terminal electrode(S1-S5) is formed by contacting source electrodes respectively. An active area is arranged on the bottom of the gate electrode, source electrode, and drain electrode.
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