| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device for improving the manufacturing yield of semiconductor devices, reducing manufacturing cost of the semiconductor device, or reducing the circuit area of an integrated circuit included in the semiconductor device. <P>SOLUTION: A memory layer 12 of a memory element 10 and a resistive layer 22 of a resistor 20 included in the semiconductor device are formed of the same material. Therefore, the memory layer 12 and the resistive layer 22 are formed in the same step, whereby the number of manufacturing steps of the semiconductor device can be reduced. As a result, the manufacturing yield of the semiconductor devices can be improved or the manufacturing cost can be reduced. In addition, the semiconductor device includes a resistor 20 having a resistive component which has high resistance value. Consequently, the area of the integrated circuit included in the semiconductor device can be reduced. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
