| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a novel process sequence for manufacturing a semiconductor wafer. <P>SOLUTION: (a) The edge of a semiconductor wafer is rounded using a grinding disk containing an abrasive having average grain size of 20.0-60.0 μm. (b) By simultaneous both-side material removing processing of wafer, the wafer is processed between two work disks. (c) By simultaneous both-side material removing processing of wafer, the wafer is processed between two work disks. (d) The edge is rounded using a grinding disk containing an abrasive having average grain size of 1.0-20.0 μm. (e) Both surfaces of the wafer are processed using an etching medium for each surface of the wafer. (f) At least one surface of the wafer is polished using a polishing pad containing an abrasive having grain size of 0.1-1.0 μm. (g) The edge of wafer is polished. (h) Chemical-mechanical polishing is performed at least on a front surface. <P>COPYRIGHT: (C)2011,JPO&INPIT |
