发明名称 |
INTEGRATED CIRCUITS INCLUDING METAL GATES AND FABRICATION METHODS THEREOF |
摘要 |
A method of forming an integrated circuit is provided. The method includes forming a gate electrode of an NMOS transistor over a substrate by a gate-first process. A gate electrode of a PMOS transistor is formed over the substrate by a gate-last process. |
申请公布号 |
US2011108922(A1) |
申请公布日期 |
2011.05.12 |
申请号 |
US20100846474 |
申请日期 |
2010.07.29 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
LIU CHUNG-SHI;YU CHEN-HUA |
分类号 |
H01L27/092;H01L21/8238 |
主分类号 |
H01L27/092 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|