发明名称 Power amplifier, power amplifier circuit and power amplifying method
摘要 The present invention discloses a power amplifier, comprising: a first transistor having a gate receiving an input signal; a second transistor coupled to the first transistor in a cascode configuration, in which a source of the second transistor is coupled to a drain of the first transistor, and a drain of the second transistor outputs an amplified signal; and a dynamic biasing circuit having two input terminals, one of which receiving the input signal, and the other one coupled to the drain of the first transistor, and an output terminal being coupled to a gate of the second transistor, thereby modulating the voltage at the drain of the first transistor.
申请公布号 US7940125(B2) 申请公布日期 2011.05.10
申请号 US20090387177 申请日期 2009.04.29
申请人 REALTEK SEMICONDUCTOR CORPORATION 发明人 WANG PO-CHIH
分类号 H03F1/22 主分类号 H03F1/22
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