| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a photoelectric conversion element which is reduced in cost and has excellent photoelectric conversion efficiency and durability. <P>SOLUTION: The photoelectric conversion element 1 includes a photoelectric conversion semiconductor layer 10 that generates a current through light absorption, a first electrode 30 formed in contact with a top surface 10s of the semiconductor layer 10 which serves as a light absorbing surface, and a second electrode 40 formed in contact with a reverse surface 10r of the semiconductor layer 10. The semiconductor layer 10 is a single-particle film having a plurality of photoelectric conversion semiconductor particles 11 of 1 to 60μm in mean particle diameter and <30% in variation coefficient of particle diameters buried at least partially in a binder layer 12, wherein the plurality of semiconductor particles 11 are partially in contact with the second electrode 40 on the reverse surface 10r and also partially in contact with the first electrode 30 on the top surface 10s via a buffer layer 20. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
