| 摘要 |
<P>PROBLEM TO BE SOLVED: To prevent the deterioration of the crystal quality of an active layer of a ZnO-based compound semiconductor element due to the diffusion of an n-type dopant. <P>SOLUTION: In the ZnO-based compound semiconductor element, a (Mg)ZnO:N layer doped with N (nitrogen) is inserted as a diffusion preventing layer 9 between a ZnO-based n-type layer 3 doped with an n-type dopant and an active layer 4 or a p-type layer 5. The diffusion-preventing layer 9 blocks the n-type dopant, thus preventing it from diffusing into the active layer 4 or the p-type layer 5. <P>COPYRIGHT: (C)2011,JPO&INPIT |
