发明名称 |
LIGHT EMITTING DIODES WITH ZINC OXIDE CURRENT SPREADING AND LIGHT EXTRACTION LAYERS DEPOSITED FROM LOW TEMPERATURE AQUEOUS SOLUTION |
摘要 |
A method for fabricating a Light Emitting Diode (LED) with increased light extraction efficiency, comprising providing a III-Nitride based LED structure comprising a light emitting active layer between a p-type layer and an n-type layer; growing a Zinc Oxide (ZnO) layer epitaxially on the p-type layer by submerging a surface of the p-type layer in a low temperature aqueous solution, wherein the ZnO layer is a transparent current spreading layer; and depositing a p-type contact on the ZnO layer. The increase in efficiency may be more than 93% with very little or no increase in cost.
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申请公布号 |
US2011101414(A1) |
申请公布日期 |
2011.05.05 |
申请号 |
US20100939044 |
申请日期 |
2010.11.03 |
申请人 |
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA |
发明人 |
THOMPSON DANIEL B.;RICHARDSON JACOB J.;DENBAARS STEVEN P.;LANGE FREDERICK F.;LANGE MARYANN E.;KIM JIN HYEOK |
分类号 |
H01L33/32;C01G9/02;H01L33/40 |
主分类号 |
H01L33/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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