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发明名称
Halbleiterbauelement mit einer Schottky-Barrieren-Diodenstruktur
摘要
申请公布号
DE60144263(D1)
申请公布日期
2011.05.05
申请号
DE20016044263
申请日期
2001.03.30
申请人
SHINDENGEN ELECTRIC MFG. CO. LTD.
发明人
MIZUE, KITADA;SHINJI, KUNORI
分类号
H01L29/872;H01L21/329;H01L29/06;H01L29/47
主分类号
H01L29/872
代理机构
代理人
主权项
地址
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