| 摘要 |
<p>A semiconductor device comprising: a first transistor; a second transistor; a third transistor; and an EL element, wherein one of a source and a drain of the first transistor is electrically connected to the EL element, wherein a gate of the first transistor is electrically connected to a gate of the second transistor, wherein one of a source and a drain of the second transistor is electrically connected to a first line, wherein the other of the source and the drain of the first transistor is electrically connected to the other of the source and the drain of the second transistor, and wherein one of a source and a drain of the third transistor is electrically connected to the other of the source and the drain of the second transistor.
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