发明名称 |
Optoelectronic device based on compound semiconductor quantum dots in SiGe cladding layers |
摘要 |
A device having an optically active region includes a silicon substrate and a SiGe cladding layer epitaxially grown on the silicon substrate. The SiGe cladding layer includes a plurality of arrays of quantum dots separated by at least one SiGe spacing layer, the quantum dots being formed from a compound semiconductor material.
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申请公布号 |
US7935956(B2) |
申请公布日期 |
2011.05.03 |
申请号 |
US20070934033 |
申请日期 |
2007.11.01 |
申请人 |
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA |
发明人 |
XIE YA-HONG |
分类号 |
H01L33/06;H01L33/00;H01L33/26;H01S5/34 |
主分类号 |
H01L33/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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