| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a wiring structure of a semiconductor device and a method for manufacturing the wiring structure. <P>SOLUTION: In a method for forming the wiring structure of the semiconductor device, a first insulator film is formed on a substrate having a cell region and a peripheral circuit region, and a first contact plug having a first conductive material, which extends through the first insulator film, is formed in the cell region. A first conductive line covering and integrated with the first contact plug, which has the first conductive material, is formed at substantially the same time when the first contact plug is formed. A second contact plug having the first conductive material, which extends through the first insulator film, is formed in the peripheral circuit region at substantially the same time when the first contact plug is formed. A second conductive line covering and integrated with the second contact plug, which has the first conductive material, is formed at substantially the same time when the second contact plug is formed. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
