发明名称 |
METHOD FOR MANUFACTURING NITROGEN COMPOUND SEMICONDUCTOR SUBSTRATE AND NITROGEN COMPOUND SEMICONDUCTOR SUBSTRATE, AND METHOD FOR MANUFACTURING SINGLE CRYSTAL SIC SUBSTRATE AND SINGLE CRYSTAL SIC SUBSTRATE |
摘要 |
In order to provide a method for manufacturing a single crystal SiC substrate that can obtain an SiC layer with good crystallinity, an Si substrate 1 having a surface Si layer 3 of a predetermined thickness and an embedded insulating layer 4 is prepared, and when the Si substrate 1 is heated in a carbon-series gas atmosphere to convert the surface Si layer 3 into a single crystal SiC layer 6, surface Si layer 3 into a single crystal SIC layer 6, the Si layer in the vicinity of an interface 8 with the embedded insulating layer 4 is left as a residual Si layer 5.
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申请公布号 |
US2011089433(A1) |
申请公布日期 |
2011.04.21 |
申请号 |
US20090997013 |
申请日期 |
2009.06.09 |
申请人 |
KAWAMURA KEISUKE;IZUMI KATSUTOSHI;ASAMURA HIDETOSHI;YOKOYAMA TAKASHI |
发明人 |
KAWAMURA KEISUKE;IZUMI KATSUTOSHI;ASAMURA HIDETOSHI;YOKOYAMA TAKASHI |
分类号 |
H01L29/24;C30B25/02;C30B25/10;C30B29/06;C30B29/36 |
主分类号 |
H01L29/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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