发明名称 METHOD FOR PRODUCING SiOx (x<1)
摘要 PROBLEM TO BE SOLVED: To provide a method for producing SiO<SB>x</SB>(x<1) which has excellent cycle properties when used as a negative electrode active material for a lithium ion secondary battery, and which enables a vapor deposition film to be deposited, the vapor deposition film having excellent gas barrier properties when used as a vapor deposition material for a barrier film. SOLUTION: In the method for producing SiO<SB>x</SB>(x<1), a raw material generating an SiO gas is vaporized by plasma heating to be formed into SiO gas, then the SiO gas is deposited as a silicon oxide. The deposition of the SiO gas is preferably performed in a cooled state by using a deposition base or mixing a non-oxidizing gas into the SiO gas. As the raw material, the one obtained by mixing Si powder and SiO<SB>2</SB>powder and/or SiO powder is preferably used. The obtained silicon oxide becomes noncrystalline SiO<SB>x</SB>(x<1) which does not show a diffraction peak derived from metal silicon and silicon dioxide in X-ray diffraction measurement. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011079724(A) 申请公布日期 2011.04.21
申请号 JP20090235633 申请日期 2009.10.09
申请人 OSAKA TITANIUM TECHNOLOGIES CO LTD 发明人 SUGANO HIDEAKI;KIZAKI SHINGO
分类号 C01B33/113;H01M4/48 主分类号 C01B33/113
代理机构 代理人
主权项
地址