CLEANING OF NATIVE OXIDE WITH HYDROGEN-CONTAINING RADICAL

摘要

PROBLEM TO BE SOLVED: To provide a substrate cleaning apparatus that cleans a native oxide film from a metal-containing conductor without changing a (k) value of a circumferential low-k dielectric material on a substrate. SOLUTION: A substrate cleaning apparatus has a remote source 35 to remotely excite a hydrogen-containing gas to form an excited gas having a first ratio of ionic hydrogen-containing chemical species to radical hydrogen-containing chemical species. The apparatus has a support 110 for the substrate 10, an ion filter 50 to filter the remotely excited gas to form a filtered excited gas having a second ratio of ionic hydrogen-containing chemical species to radical hydrogen-containing chemical species, the second ratio being different than the first ratio, and a gas distributor 70 to introduce the filtered excited gas into a process zone 108 in a chamber 106a. COPYRIGHT: (C)2011,JPO&INPIT