| 摘要 |
FIELD: electricity. ^ SUBSTANCE: method involves the location of substrates with applied photoresist layer in plasma-chemical reactor and treatment of photoresist layer in oxygen-containing medium. Note that substrates are located in plasma-chemical reactor at substrate holder. Photoresist further development is performed simultaneously on all substrates located in plasma mixture of oxygen and inert gas, where as inert gas helium or neon or argon is used. Note that oxygen content is within 5-15 vol %, and inert gas - within 85-95 vol %. The pressure in reaction chamber is 80-150 Pa, density of radio-frequency power is within 0.02-0.04 W/cm3 and treatment time within 40-300 seconds. ^ EFFECT: increase of productivity and yield ratio owing to improvement of treatment degree during further development of photoresist on piezoelectric substrates by adding inert gas to gaseous discharge. ^ 1 tbl, 3 ex |
