发明名称 |
Non-volatile memory device and method of manufacturing the same |
摘要 |
The non-volatile memory device may include a substrate, a plurality of first signal lines on the substrate in a vertical direction, a plurality of memory cells having ends connected to the plurality of first signal lines, a plurality of second signal lines perpendicular to the plurality of first signal lines on the substrate and each connected to other ends of the plurality of memory cells, and a plurality of selection elements on the substrate and connected to at least two of the plurality of first signal lines.
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申请公布号 |
US2011085368(A1) |
申请公布日期 |
2011.04.14 |
申请号 |
US20100659516 |
申请日期 |
2010.03.11 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM HO-JUNG;YOO IN-KYEONG;KIM CHANG-JUNG;HONG KI-HA |
分类号 |
G11C5/06;G11C11/00;H01L21/82 |
主分类号 |
G11C5/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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