| 摘要 |
<p>Provided is a solid-state image pickup device having a charge retention section in a pixel, wherein the charge transfer efficiency from the charge retention section to an FD is improved irrespective of the impurity concentration of the charge retention section. The solid-state image pickup device has: a photoelectric conversion section; the charge retention section which includes a first conductivity type first semiconductor region; and a transfer section which includes a transfer gate electrode which controls the potential between the charge retention section and a sense node. The charge retention section includes a control electrode, a second conductivity type second semiconductor region having an impurity concentration higher than that of the first semiconductor region is disposed on the surface of the semiconductor region between the control electrode and the transfer gate electrode, a first conductivity type third semiconductor region is disposed under the second semiconductor region, and the impurity concentration of the third semiconductor region is higher than that of the first semiconductor region.</p> |
