Hetero-substrate, ?-nitride semiconductor devices using the same and manufacturing method of thereof,申请号KR20090053115-传众专利搜索

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发明名称	Hetero-substrate, ?-nitride semiconductor devices using the same and manufacturing method of thereof
摘要
申请公布号	KR101028585(B1)	申请公布日期	2011.04.12
申请号	KR20090053115	申请日期	2009.06.15
申请人		发明人
分类号	H01L21/20	主分类号	H01L21/20
代理机构		代理人
主权项
地址

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