| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method and an apparatus for etching a photomask. <P>SOLUTION: The method for etching the photomask includes a step of providing a processing chamber 102, having a substrate supporting pedestal 124 adapted to receive a substrate 122 for photomask on the top part. An ion-radical shield 170 is arranged on the pedestal. A substrate is placed on the pedestal below the ion-radical shield. A processing gas is introduced into the processing chamber, and a plasma is formed from the processing gas. The substrate is mainly etched by using radicals that pass through the shield. <P>COPYRIGHT: (C)2011,JPO&INPIT |
