发明名称 POLISHING METHOD AND SEMICONDUCTOR-DEVICE MANUFACTURING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a polishing method that achieves high flatness of a polished surface of a polishing body after CMP processing, and further reduces the defect density of scratches or the like on the polishing surface of the polishing body compared with the conventional one. <P>SOLUTION: The polishing method includes: a conditioning step for spraying a conditioning agent, containing liquid, at a prescribed pressure on the surface of a non-foaming polishing pad 22 arranged on a polishing table 21; and a polishing step for polishing the surface of a polishing body 20 by supplying polishing slurry, containing cerium oxide particles and a surfactant, to the polishing pad 22 and by sliding the polishing body 20 and the polishing pad 22 relative to each other. The cross-section of the polishing pad 22 after the conditioning step is configured such that an average value of an amount of residual cerium when measuring several points in a measuring region of 200 &mu;m<SP>2</SP>including the surface of the polishing pad 22 is set to &le;0.35 at%. <P>COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011071215(A) 申请公布日期 2011.04.07
申请号 JP20090219331 申请日期 2009.09.24
申请人 TOSHIBA CORP 发明人 MATSUI YUKITERU;SETA SATOKO;ONO TAKATOSHI;EDA HAJIME
分类号 H01L21/304;B24B37/00;B24B37/20;B24B53/017;B24B53/02;B24B53/095 主分类号 H01L21/304
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