| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device including a deep trench film in accordance with inter-element breakdown voltage and in-element breakdown voltage required for an element to be formed. SOLUTION: This semiconductor device includes: a substrate 10 with an N+ type embedded layer 12 and an N-type semiconductor layer 13 laminated on a P-type silicon substrate 11; deep trenches 20, formed deeper than the formation position of the N+ type embedded layer 12 in the substrate 10, for partitioning the inside of an element formation region in the substrate 10; sidewall oxide films 23, 24 formed along the inner walls of the deep trenches 20; deep trench films 26 each including a TEOS film for embedding the inside of the deep trench 20; and an LDMOS formed in the element formation region partitioned by the deep trench films 26. The deep trench 20 comprises a first deep trench 21 formed to a boundary depth shallower than the upper surface of the N+ type embedded layer 12, and a second deep trench 22 having a smaller opening diameter than the first deep trench 21 from the boundary depth to the bottom. COPYRIGHT: (C)2011,JPO&INPIT
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