| 摘要 |
PROBLEM TO BE SOLVED: To provide a simulation method for predicting any influence given by process fluctuation to circuit characteristics. SOLUTION: In a circuit simulation device for calculating the set value of the SPICE parameter of an MOSFET for analyzing the variation of a semiconductor circuit having an MOSFET, the circuit simulation device includes a storage part 101 in which variables giving an influence to the variation characteristics of the MOSFET include variables related with the manufacturing conditions or element structure of the MOSFET, and intermediate model formula configured of universal functions having physical correlation between physical quantity defined by the variables and a SPICE parameter is stored; and a setting part 102 for setting information related with the variables included in intermediate model formula; a calculation part 103 for calculating the set value of the SPICE parameter based on the information set by the setting part and intermediate model formula stored in the storage part; and an output part 104 for outputting the process fluctuation dependency of the semiconductor circuit. COPYRIGHT: (C)2011,JPO&INPIT
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