| 摘要 |
A high frequency diode comprising: a P type region, an N type region, and an I layer as a high resistivity layer interposed between the P type region and the N type region, wherein the I layer is made of a silicon wafer that has a carbon concentration of 5×1015 to 5×1017 atoms/cm3, interstitial oxygen concentration of 6.5×1017 to 13.5×1017 atoms/cm3, and a resistivity of 100 &OHgr;cm or more.
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