| 摘要 |
The invention relates to a wordline booster circuit, especially an SRAM-wordline booster circuit, comprising a driving element (20) for shifting a voltage level of a charge storage element (50) for storing a charge necessary to generate a boosted voltage (Vb), a feedback element (30) for controlling the switching state of a charging element (40), wherein the charging element (40) is actively switchable between a turned-off state during a first time interval and a turned-on state during a second time interval, and an output port (14) for supplying the boost voltage to at least one wordline-driver circuit (100) of a memory device (200). The invention relates also to an operation method for such a wordline booster circuit as well as a memory array implementation on an integrated circuit, especially an SRAM memory array, with a wordline booster circuit.
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