发明名称 LITHOGRAPHY PATTERNING METHOD
摘要 A method for fabricating an integrated circuit device is disclosed. The method is a lithography patterning method that can include providing a substrate; forming a protective layer over the substrate; forming a conductive layer over the protective layer; forming a resist layer over the conductive layer; and exposing and developing the resist layer.
申请公布号 US2011076843(A1) 申请公布日期 2011.03.31
申请号 US20090566853 申请日期 2009.09.25
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 HUANG I-HSIUNG;LIN CHIN-HSIANG;LEE HENG-JEN;LIU HENG-HSIN
分类号 H01L21/28;H01L21/302 主分类号 H01L21/28
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