发明名称 |
LITHOGRAPHY PATTERNING METHOD |
摘要 |
A method for fabricating an integrated circuit device is disclosed. The method is a lithography patterning method that can include providing a substrate; forming a protective layer over the substrate; forming a conductive layer over the protective layer; forming a resist layer over the conductive layer; and exposing and developing the resist layer.
|
申请公布号 |
US2011076843(A1) |
申请公布日期 |
2011.03.31 |
申请号 |
US20090566853 |
申请日期 |
2009.09.25 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
HUANG I-HSIUNG;LIN CHIN-HSIANG;LEE HENG-JEN;LIU HENG-HSIN |
分类号 |
H01L21/28;H01L21/302 |
主分类号 |
H01L21/28 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|