MAGNETIC MEMORY

摘要

Variance of characteristics of a magnetoresistive effect element is suppressed and a magnetic field which leaks from a reference layer and operates to a recording layer is reduced. Magnetic memory is provided with: a first magnetic layer (12) wherein the direction of magnetization is substantially perpendicular to a film surface and variable; a tunnel barrier layer (13) arranged on the first magnetic layer; a second magnetic layer (14), which is arranged on the tunnel barrier layer and has the magnetization direction which is substantially perpendicular to the film surface and invariable; and a third magnetic layer (16), which is arranged on the second magnetic layer and has magnetization in antiparallel with the magnetization direction of the second magnetic layer.  The diameter of an upper surface of the first magnetic layer is smaller than that of a lower surface of the tunnel barrier layer, and the diameter of a lower surface of the second magnetic layer is equivalent to that of an upper surface of the tunnel barrier layer or smaller.