| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device that facilitates a registration of a defective block. <P>SOLUTION: The nonvolatile semiconductor memory device includes: a memory cell array with a plurality of blocks each being the erasing unit; a ready/busy control circuit that outputs a busy signal when an internal operation is being done to the blocks; and a control unit that registers the blocks as defective blocks when the ready/busy control circuit outputs the busy signal in receiving an input of a bad block command. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
