SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To increase driving current in a semiconductor device having a transistor of a GAA (Gate All Around) structure. SOLUTION: The semiconductor device includes: a semiconductor substrate 10; a first semiconductor layer 11 formed in source/drain regions on the semiconductor substrate; a second semiconductor layer 12 having a first part 12a formed on the first semiconductor layer and a second part 12b linearly formed in a channel region positioned between the source/drain regions; and a gate electrode 18 formed around the second part of the second conductor layer via an insulating film 17. The film thickness of the second part of the second conductor layer is less than that of the first part of the second semiconductor layer. COPYRIGHT: (C)2011,JPO&INPIT