发明名称 |
Semiconductor Device with both I/O and Core Components and Method of Fabricating Same |
摘要 |
A semiconductor device having a core device with a high-k gate dielectric and an I/O device with a silicon dioxide or other non-high-k gate dielectric, and a method of fabricating such a device. A core well and an I/O well are created in a semiconductor substrate and separated by an isolation structure. An I/O device is formed over the I/O well and has a silicon dioxide or a low-k gate dielectric. A resistor may be formed on an isolation structure adjacent to the core well. A core-well device such as a transistor is formed over the core well, and has a high-k gate dielectric. In some embodiments, a p-type I/O well and an n-type I/O well are created. In a preferred embodiment, the I/O device or devices are formed prior to forming the core device and protected with a sacrificial layer until the core device is fabricated.
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申请公布号 |
US2011076813(A1) |
申请公布日期 |
2011.03.31 |
申请号 |
US20100961167 |
申请日期 |
2010.12.06 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
CHENG CHUNG LONG;CHUNG SHENG-CHEN;THEI KONG-BENG;CHUANG HARRY;LIANG MONG SONG |
分类号 |
H01L21/8238 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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