| 摘要 |
PURPOSE: A method of operating for a nonvolatile memory device is provided to improve the program fail of a non-volatile memory device by improving the interference between memory cells which are connected to a word line. CONSTITUTION: A memory cell array comprises a first to n-th wore line. Word lines are arranged between a source select line and a drain select line. The first program operation of the memory cells connected to a k-th word line is performed. The second program operation of the memory cells connected to a(k-1)-th word line is performed. The third program operation of the memory cells connected to a(k+2)-th word line is performed. The fourth program operation of the memory cells connected to a(k+1)-th word line is performed. |
