| 摘要 |
A semiconductor memory device includes n resistance change elements which are arranged in one cell, have a low-resistance state and a high resistance state, are connected in series or parallel, have different resistance values in the same resistance state, and change between the low-resistance state and the high-resistance state under different conditions, and a write circuit which is connected to one end of the n resistance change elements, and applies a pulse current m (1≦̸m≦̸n) times to the n resistance change elements during a write operation. Letting Im be a current value of an mth pulse current, condition I1>I2> . . . >Im holds.
|
