发明名称 |
High density SRAM cell with hybrid devices |
摘要 |
Hybrid SRAM circuit, hybrid SRAM structures and method of fabricating hybrid SRAMs. The SRAM structures include first and second cross-coupled inverters coupled to first and second pass gate devices. The pull-down devices of the inverters are FinFETs while the pull-up devices of the inverters and the pass gate devices are planar FETs or pull-down and pull-up devices of the inverters are FinFETs while the pass gate devices are planar FETs.
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申请公布号 |
US7915691(B2) |
申请公布日期 |
2011.03.29 |
申请号 |
US20070928418 |
申请日期 |
2007.10.30 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
WONG ROBERT C.;YANG HAINING SAM |
分类号 |
H01L27/088 |
主分类号 |
H01L27/088 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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