| 摘要 |
A plasma etching method includes etching an etching target under plasma conditions using a process gas, the process gas including a saturated fluorohydrocarbon shown by the formula (1): CxHyFz, wherein x is 3, 4, or 5, and y and z are individually positive integers, provided that y>z is satisfied. When etching a silicon nitride film that covers a silicon oxide film formed on the etching target, the silicon nitride film can be selectivity etched as compared with the silicon oxide film by utilizing the process gas including the specific fluorohydrocarbon under the plasma conditions.
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