| 摘要 |
PROBLEM TO BE SOLVED: To improve uniformity of a dose even when a beam current of an ion beam has periodic variation during batch type ion implantation processing, and to make uniform characteristics of a semiconductor device manufactured using the same. SOLUTION: In an ion implantation process of irradiating a plurality of wafers with the ion beam while rotating a wafer disk where the plurality of wafers are loaded, the beam current of the ion beam is measured to determine whether the beam current has periodic variation. When it is determined that the beam current has periodic variation, the rotating speed of the wafer disk is updated to the number of revolutions that does not synchronize with the periodic variation of the beam current. COPYRIGHT: (C)2011,JPO&INPIT
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