发明名称 Power semiconductor device
摘要 A power semiconductor device includes a conductive board and a switching element mounted on the conductive board and electrically connected thereto. The power semiconductor device also includes an integrated circuit mounted on the conductive board at a distance from the switching element and electrically connected thereto. The switching element turns ON/OFF a connection between first and second main electrodes in response to a control signal inputted to a control electrode. The integrated circuit includes a control circuit which controls ON/OFF the switching element and a back side voltage detection element which detects a voltage of the back side of the integrated circuit.
申请公布号 US7910949(B2) 申请公布日期 2011.03.22
申请号 US20070870133 申请日期 2007.10.10
申请人 MITSUBISHI ELECTRIC CORPORATION 发明人 YASUDA YUKIO;KAWAMOTO ATSUNOBU;GOUDO SHINSUKE
分类号 H01L29/74 主分类号 H01L29/74
代理机构 代理人
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