| 摘要 |
PROBLEM TO BE SOLVED: To precisely and efficiently evaluate a state of crystallization after annealing processing without contact. SOLUTION: In a semiconductor inspection device 200 including a stage 201 on which a multilayer structure 210 having a semiconductor layer after the annealing processing is mounted, a light source 202 which irradiates the semiconductor layer with light, a light reception portion 205 which receives Raman scattering light obtained by the irradiation with the light by the light source 202, and an inspection portion 207 which inspects crystallinity of the semiconductor layer using the Raman scattering light that the light reception portion 205 receives, the inspection portion 207 includes an area division portion which divides an area, specified with a Raman spectrum of the Raman scattering light, with a predetermined threshold associated with a wave number, and a crystallinity calculation portion which calculates the area ratio of an area portion, exceeding the predetermined threshold, after the area division to the entire area before the area division, and defines the calculation result as crystallinity of the semiconductor layer. COPYRIGHT: (C)2011,JPO&INPIT
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