发明名称 |
THERMO-ELECTRIC SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
A thermo-electric semiconductor device is provided. The thermo-electric semiconductor device includes: a first electrode layer; a spacer layer formed on the first electrode layer and having a plurality of pillars with a uniform height, the plurality of pillars thermally grown and protruded on a surface of the spacer layer; and a second electrode layer formed over the spacer layer in such a manner as to contact tops of the protruded pillars.
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申请公布号 |
US2011065223(A1) |
申请公布日期 |
2011.03.17 |
申请号 |
US20100946049 |
申请日期 |
2010.11.15 |
申请人 |
HANVISION CO., LTD.;LUMIENSE PHOTONICS INC. |
发明人 |
HANNEBAUER ROBERT |
分类号 |
H01L21/04 |
主分类号 |
H01L21/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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