| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device in which memory cells having floating gate electrodes are highly integrated. SOLUTION: The method of manufacturing the semiconductor device includes the processes of: forming a first conductor layer including silicon on the surface of a semiconductor layer 11 via a tunnel insulating film 12; forming isolation trenches 9 reaching the semiconductor layer 11 from the surface of the first conductor layer and forming a plurality of conductive plates 13b to serve as floating gate electrodes, where the first conductor layer is divided into the conductive plates 13b with a predetermined width; burying the isolation trenches 9 with an inter-element insulating film 15 up to intermediate parts of side faces of the conductive plates 13b; forming silicon nitride films 16a on exposed surfaces of the plurality of conductive plates 13b while maintaining intervals between the conductive plates 13b at a width equal to or larger than the predetermined width; and forming a second conductor layer to serve as a control gate electrode 19a to bury the upper parts of the isolation trenches 9. The silicon nitride film 16a is formed by nitriding silicon contained in the conductive plates 13b with a nitrogen radical generated by exciting a material gas including a nitrogen element. COPYRIGHT: (C)2011,JPO&INPIT |
